Micron declares high-volume availability of 30-nm DDR3L-RS SDRAMs for ultrathin computing devices and tablet

September 20, 2012 // By Paul Buckley
Micron Technology has announced high-volume availability of 30 nm reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets.

The 2 Gb and 4 Gb solutions reduce power consumption in standby to provide longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

Previously announced as 'DDR3Lm', the devices improve overall system power consumption by reducing self refresh power (IDD6), enabling Micron to provide chipset vendors, enablers and electronics manufacturers with best-in-class, reduced-power memory that offers the same performance, quality and reliability as standard DRAM.  DDR3L-RS meets the expanding needs of today’s ultrathin computing and tablet markets and paves the way for enhanced features and capabilities in products like the Intel Ultrabook device.

Micron’s milestone of being the first vendor with DDR3L-RS products to be validated at Intel is affirmed in a web posting on Intel’s site.

“Micron was the first DRAM supplier validated on the Ivy Bridge platform with DDR3L-RS, setting the industry standard for reduced standby PC DRAM,” said Geof Findley, Memory Enabling Senior Manager at Intel.

In addition to the 2 Gb and 4 Gb devices, Micron has begun sampling 8 Gb x 32 DDR3L-RS and is delivering samples of 8 Gb x 16 DDR3L-RS; production is slated for December 2012. The products offer additional system design flexibility by reducing board space and increasing density.  Additional power and footprint savings are expected with the launch of DDR4-RS in early 2013.

Visit Micron Technology at www.micron.com