The voltage scalable High-Voltage NMOS and PMOS transistor devices are optimised for various drain-source voltage levels (VDS) from 20V to 100V and provide significant lower on-resistance resulting in area savings. Using an optimised 30V NMOS transistor in power management applications instead of a fixed 50V transistor results in an area saving of approximately 50%. A 60V optimised NMOS device results in 22% less area when compared to a standard 120V NMOS transistor. Foundry customers developing complex High-Voltage analogue/mixed-signal applications such as large driver and switching ICs instantly benefit from more dice per wafer.
Area-optimised devices are suited for a wide range of applications such as MEMS drivers, motor drivers, switches and power management ICs used in automotive, medical and industrial products. Ams says its Full Service Foundry division is among first foundries worldwide offering true voltage scalable transistors to its foundry customers, and is fully automotive (ISO/TS 16949) and medical (ISO 13485) certified.
This latest High-Voltage process extension is an add-on to the company’s ”More Than Silicon” portfolio, under which ams provides a package of technology modules, intellectual property, cell libraries, engineering consultancy and services to help customers successfully develop advanced analog and mixed-signal circuit designs based on its specialty technologies.
The complete set of voltage scalable transistors including device layout generator (PCells), simulation models, verification rule decks for Calibre and Assura as well as documentation such as Design Rules and Process Parameters documents can be downloaded by registered users from the company’s secure foundry support server at http://asic.ams.com.
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