MOSFET H-bridge reduces footprint by 50 percent

January 21, 2015 // By Paul Buckley
Diodes Incorporated has unveiled two MOSFET H-bridge devices designed to simplify motor driving and inductive wireless charging circuits by cutting component count and reducing PCB footprint by 50%.

The 40 V-rated H-bridge, the DMHC4035LSD, is targeted at meeting the requirements of automotive motor driving applications, whereas the 30 V-rated H-bridge, the DMHC3025LSD, is suitable for 1 2 V single-phase fan applications.

By packaging dual N-channel and dual P-channel MOSFETs to make a full H- Bridge in a single 5 mm x 6 mm SO-8 footprint, the DMHC3025LSD and DMHC4035LSD replace the equivalent four SOT23 or two SO-8 packages for a wide range of space-constrained automotive and industrial applications, including: low-power DC brushless motor driving, fan control and similar requirements for driving inductive loads.

The H-bridges' space-saving advantage is complemented by the low RDS(ON) performance of the MOSFETs: typically 45 mΩ at 10 V VGS and 65 mΩ at -10 V VGS, respectively, for the 40 V N-channel and P-channel devices. The minimal conduction losses resulting from the low on resistance mean the H-bridges are able to tolerate higher continuous current under motor stall conditions. Under +70°C high ambient operating temperature, the 30 V and 40 V H-bridges can support continuous currents of 3A and 2 A, respectively, thereby accommodating worst-case motor stall currents.

www.diodes.com