MOSFETs for battery management applications

May 06, 2013 // By Graham Prophet
Advanced Power Electronics has launched dual n- and p-channel MOSFETs with low RDS(on), 1.8V gate drive, and small-outline packages.

Adding to its MOS power semiconductors for DC-DC power conversion applications, APEC has announced two power MOSFETs for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively. Both products feature low on-resistance, 16 mΩ for the AP9922GEO-HF-3 and 25 mΩ for the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package. The company says the devices represent the best combination of fast switching, ruggedness, ultra low on-resistance and cost-effectiveness, adding “As designers of battery-powered applications continue to focus on battery life, it becomes increasingly more important to address the need to manage the battery efficiently, and provide appropriate components for efficient protection.”

APEC, www.a-powerusa.com/docs/AP9922GEO-3.pdf and and www.a-powerusa.com/docs/AP9923GEO-3.pdf