The Ultra-Junction X-Class Power MOSFETs with fast body diodes exhibit on-state resistances at 33 mΩ in the SOT-227 package and 41 mΩ in the PLUS264, along with low gate charges and superior dv/dt performance. The avalanche capability enhances the ruggedness, preventing device failure induced by voltage transients and accidental turn-on of parasitic bipolar transistors. The fast soft-recovery body diode also helps reduce switching losses and electromagnetic interference (EMI).
With current ratings up to 110A, t he devices are aimed at high efficiency, high power density applications such as switched mode and resonant mode power supplies, AC and DC motor drives, DC-DC converters, robotic and servo control, electric vehicle battery chargers, renewable energy inverters, and Power Factor Correction (PFC) circuits.
The new 850V X-Class Power MOSFETs with HiPerFET body diodes are available in TO-220, TO-263HV, SOT-227, TO-247, TO-264, PLUS264 and TO-268HV packaging. Some example part numbers include IXFH20N85X, IXFK50N85X, IXFB90N85X and IXFN110N85X, with current ratings of 20A, 50A, 90A, and 110A, respectively.