New 4G LTE and WCDMA PAs claims industry-best peak efficiency across all modes and bands

March 05, 2012 // By Paul Buckley
RF Micro Devices, Inc. has expanded the company’s ultra-high efficiency power amplifier (PA) product portfolio to include six 4G LTE PAs. The new PAs claim to deliver superior peak efficiency and current consumption in LTE mode and complement RFMD’s first-generation family of ultra-high efficiency PAs for WCDMA applications.

With the addition of the six new LTE PAs, RFMD’s ultra-high efficiency product family now covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 4, 7, 11, 13, 17, 18, 20, and 21 – helping to accelerate the global reach of LTE in mobile devices and enhancing the mobile broadband consumer experience related to data throughput, battery life, and thermal performance.

RFMD’s ultra-high efficiency PAs reset the bar for performance in smartphones and other high-performance data-centric connected devices. The PAs deliver ultra-high peak efficiency of 42%-44% in LTE mode, above competitive product portfolios. RFMD’s LTE PAs also offer unprecedented linearity at the highest power conditions, enabling bandwidths up to 20 MHz and resulting in higher data transfers.

In both 3G and 4G LTE, RFMD’s ultra-high efficiency PAs claim to deliver best-in-class current consumption across all power levels and in all modes and bands. RFMD’s leadership in power management is expected to be increasingly critical in calendar 2012, as leading cellular solutions begin to adopt advanced power management schemes, such as average power tracking (APT) and envelope tracking (ET).

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