New LDMOS power transistors optimized for picocell and microcell systems feature world’s first asymmetric MMICs

October 30, 2012 // By Paul Buckley
NXP Semiconductors N.V. has introduced a new portfolio of LDMOS power transistors designed for small cell wireless base stations.

With dedicated solutions for both picocell and microcell architectures – which average 1 to 2 W, and 8 to 12 W, respectively – the RF power transistors span frequency ranges from 700 MHz to 2.7 GHz and include the world’s first asymmetric MMICs, as well as low-cost, low-power plastic devices.  Delivering an optimal balance of energy efficiency and integration, NXP’s extensive high-performance RF portfolio provides unprecedented flexibility in designing highly scalable, cost-optimized systems.  

NXP solutions for microcells include:

Asymmetric and symmetric MMICs for dual-stage microcells.   NXP has introduced a new range of monolithic microwave integrated circuits, including the industry’s first asymmetric MMICs, which provide more power efficiency at back-off and offer increased flexibility, particularly in Doherty configurations in microcells and antenna arrays. The first MMIC based on NXP’s Gen7 LDMOS technology, the BLM7G22S-60PB(G), is fully released, with qualification samples of 7 new product types now available.  All 7 MMICs are dual path with two separate amplifiers, each with 30-dB gain and a certain power rating of P1 dB. Ideal for dual-stage micro base stations where high integration is a priority, NXP’s family of symmetric and asymmetric MMICs offer a modular approach, allowing different power levels on each path, as well as better isolation between the two paths for better Doherty performance and stability.

LDMOS power transistors for single-stage, high-performance microcells. For the most performance-sensitive microcells, NXP has introduced a range of single-stage dual-path devices in different bands, including the BLF6G22LS-40P and the BLF6G27LS-40P, which are currently in volume production. Additional products, including the BLP7G10S-45P, the BLP7G22S-60P and the BLF8G27LS-50A are currently in development.

Solutions for picocells include:

Low-power LDMOS transistors. NXP now offers the plastic 10-W BLP7G22-10, providing 17 dB gain at 2.0 GHz, and the 7.5-W BLP7G27-07, providing 15.3 dB gain at 2.6 GHz, for final-stage picocell applications in a variety of configurations from Class A to Doherty. NXP’s low-power plastic LDMOS transistors offer high performance at