New Schottky barrier diodes and dual N-Channel MOSFETs claims industry’s highest performance in a 2-mm package

September 06, 2012 // By Paul Buckley
Toshiba Electronics Europe (TEE) has expanded its line-up of small-signal, medium-power Schottky barrier diodes (SBDs) and MOSFETs that are especially suitable for wireless power transfer applications.

The range of devices covers single and dual n- and p-channel MOSFETs as well as SBDs. The miniature devices are optimised to meet the low power consumption and compact form factor demands of wireless charging applications for portable, battery-powered devices such as mobile phones, digital cameras and video recorders, tablet computers and notebook PCs.

Among the new devices is a MOSFET ideally suited to load switching in a wireless charging transmitter circuit. The 30 V SSM6N55NU is the industry’s highest performance dual -channel MOSFET in a UDFN6 package measuring just 2.0 mm x 2.0 mm x 0.75 mm. A drain current of 4 A and a maximum ON resistance (RDS(ON)) down to 46 mΩ ensure high-efficiency operation. The device joins a comprehensive family of MOSFETs that combine low RDS(ON) with ultra-compact packaging.

Toshiba’s latest single and dual SBDs are rated for reverse voltages of 30 V and feature very low forward voltage (VF) ratings down to just 0.45 V. Ultra-miniature packaging options range from USC (SOD-323) with dimensions of 2.5 mm x 1.25 mm x 0.9 mm to CST2B options that measure just 1.2 mm x 0.8 mm x 0.6 mm.

Applications for the new MOSFETs and diodes include load switching, low-voltage rectification, bridge circuits and reverse current protection.

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