NPT IGBT product family offers 20 percent reduction in total switching and conduction losses

September 06, 2012 // By Paul Buckley
Microsemi Corporation has introduced three more devices in the company’s new generation of 1200 V non-punch through (NPT) IGBTs: the APT85GR120B2, APT85GR120L and APT85GR120J transistors.

All of the devices in the product family are based on Microsemi's advanced Power MOS 8 technology, which enables a reduction of at least 20 percent in total switching and conduction losses as compared to competitive solutions. The devices are designed for high power, high performance switch mode products such as arc welders, solar inverters, and uninterruptible and switch mode power supplies.

Microsemi's 1200 V solutions can be packaged with Microsemi's FREDs or silicon carbide Schottky diodes to provide engineers with a highly integrated solution that allows them to streamline product development efforts.

Features include faster switching due to a lower gate charge (Qg) than similar devices with more efficient power conversion enabled by hard switching operation greater than 80 kHz.

The devices are easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications.  

In addition, Microsemi will soon offer an APT85GR120JD60 device that is packaged in a SOT-227 and includes a 60 A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary ‘DQ’ generation of low switching loss, avalanche energy rated diode technology.


The APT85GR120B2 transistor is offered in a TO-247 MAX package, the APT85GR120L is packaged in a TO-264 and the APT85GR120J is packaged in a SOT-227. Microsemi's new NPT IGBTs are fully characterized and in production now.

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