NPT IGBTs offer a reduction of 20 percent in total switching and conduction losses

May 11, 2012 // By Paul Buckley
Microsemi Corporation has introduced the first in a series of new generation 1200 volt (V) non-punch through (NPT) IGBTs.

The new family of IGBTs applies Microsemi's leading-edge Power MOS 8 technology, and offers a reduction of 20 percent or more in total switching and conduction losses as compared to competitive solutions.

The IGBTs are targeted at applications including welding, solar inverters, and uninterruptible and switch mode power supplies.

Microsemi’s new discrete products are the APT40GR120B, APT40GR120S and APT40GR120B2D30. The devices are offered on a standalone basis or can be packaged in combination with one of Microsemi’s FRED or silicon carbide Schottky diodes to simplify product development and manufacturing.

Additional features of the device include a lower gate charge (Qg) than competition for faster switching as well as hard switching operation greater than 80 KHz to enable more efficient power conversion.

The device is easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications and is Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.

The APT40GR120B transistor is offered in a TO-247 package and the APT40GR120S is packaged in surface mount D3 PAK. The APT40GR120B2D30 is a T-MAX packaged device that includes a 30 A anti-parallel, ultrafast recovery diode built with Microsemi’s proprietary ‘DQ’ generation of low switching loss, avalanche energy rated diode technology.


The first two of Microsemi’s new NPT IGBTs are fully characterized and in production now. Samples are available now.

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