Octal DMOS-FET arrays cut power loss in multi-channel driver circuits

March 04, 2016 // By Graham Prophet
Toshiba offers a pin-compatible upgrade to previous generations of driver device with DMOS FET source-output (or sink-output) driver, transistor arrays, allowing a reduction in losses of up to 40%

These efficient transistor arrays, Toshiba says, are the first with a DMOS FET type source-output driver. The new TBD62783A series succeeds the TD62783 series of bipolar transistor arrays, cutting power loss by about 40% and will find use in a wide range of applications including LED drives.

 

Similarly, the TBD62083A series, with a DMOS FET type sink-output driver, as a successor to the TD62083 series of bipolar transistor arrays for applications including motors, relays and LED drives.

With eight drivers per package, the FET devices operate without a base current, reducing input currents. In combination with their ability to accept high current densities while maintaining low on-resistance, the DMOS FET devices increase efficiency and ensure reduced power losses. All devices support high-voltage, large-current drive with absolute maximum rating of the output being 50V / 0.5A. The devices are available in a range of packages including SOP18, DIP18 and SOL18 for surface mounted applications and SSOP18 (0.65mm pitch) to enable usage in space-constrained designs. In common with other compact, multi-device array components, the data sheet contains a cautionary note to observe thermal constraints.

 

To achieve the high levels of integration seen in these devices, Toshiba has applied its BiCD technology, with integration of bipolar, CMOS, and DMOS devices. The company has positioned this as the future mainstream for analogue ICs.

 

Toshiba; www.toshiba.semicon-storage.com