UltraCMOS 10 RF SOI (silicon on insulator) technology delivers both flexibility and performance for RF front-end design, with a claimed greater-than-50% performance improvement over comparable solutions. At 130 nm dimensions, the technology delivers the support needed for the latest generation of LTE-Advanced smartphones and, for the first time, will allow the company to deliver cost-competitive products for 3G smartphones.
The base material – wafers of silicon-on-insulator – come from Soitec, and diffusion is at GlobalFoundries, who commented, “...we co-developed a custom flow to help make Peregrine’s new UltraCMOS 10 generation a truly cutting-edge advance in RF SOI.”
Peregrine says that the UltraCMOS 10 130 nm generation delivers the industry’s best R ON.COFF performance and enables improved performance and scaling. The R ON C OFF figure of merit is a ratio of how much loss occurs when a signal goes through a switch in its ON state (R ON, or on-resistance) and how much the radio signal leaks through the capacitor in its OFF state (C OFF, or off capacitance). The R ON C OFF performance metric for UltraCMOS 10 technology is 113 fsec. This is a five-fold improvement over the first generation released by Peregrine 10 years ago. Methodologies and materials have lowered insertion loss without sacrificing isolation performance. In addition to improved R ON C OFF performance, UltraCMOS 10 platform uses Peregrine’s design technology, which delivers linearity of more than 75 dBm at 900 MHz and equates to higher data rates and improved co-existence for consumers.
Peregrine Semiconductor; www.psemi.com