Plessey releases 350mW GaN on silicon LEDs

July 01, 2013 // By Graham Prophet
Plessey is sampling a 350mW LED product (p/n PLB010350), entry level lighting products manufactured on Plessey's 6-inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility.

These new LED products are aimed at a variety of solid state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and a variety of pulse lighting applications.

Plessey comments that the MAGIC LED product range is expanding in both light output and efficacy. The PLB010350 is the first such high current device operating at anywhere from 350mA through to 2A in pulse applications. Plessey has also been able to demonstrate the versatility and the potential of the Plessey GaN on Si technology by constructing an LED with a relatively large die area. This 350mW product demonstrates the inherent flexibility for the manufacture of LEDs with a 6-inch GaN on silicon substrate in an integrated circuit manufacturing line. The use of Plessey's MAGIC GaN line using standard semiconductor manufacturing processing provides yield entitlements of greater than 95% and fast processing times providing a significant cost advantage over standard LEDs of similar quality. Plessey announced the first commercially available GaN on large diameter silicon LEDs in April 2013.