Power conversion development board demonstrates ease of designing power systems with 200-V eGaN FETs

February 05, 2013 // By Paul Buckley
Efficient Power Conversion Corporation has introduced the EPC9004 development board, featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs).

The board demonstrates how IC gate drivers, optimized for GaN FETs, make the task of transitioning from silicon power transistors to higher performance eGaN FETs simple and cost effective.   

The EPC9004 development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET.   The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.

The EPC9004 simplifies the evaluation process of high performance eGaN FETs by including all the critical components, including a dedicated gate driver, on a single 2 x 1.5 inch board that can be easily connected into any existing converter.  In addition, there are various probe points on the board to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included for reference and ease of use.

The 200 V EPC2012 eGaN FET is ideal for use in applications such as wireless charging, magnetic resonance imaging (MRI), and low RF frequency applications such as smart meter communications.

The EPC9004 development board is priced at $95.00. Like all EPC products, the board is available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

More Information about the EPC9004 at
http://epc-co.com/epc/documents/guides/EPC9004_qsg.pdf