Power FET packaging update contributes to switching-circuit efficiency

March 04, 2016 // By Graham Prophet
STMicroelectronics promises gains in power-conversion efficiency with a new technology/packaging solution for MOSFET transistors; its 650V MDmesh DM2 N-channel power MOSFETs combine an advanced power-transistor structure with a compact, cost-effective, and thermally-efficient PowerFLAT 8x8 HV packaging.

This power-transistor family comprises a wide range of super-junction Power MOSFETs with integrated fast-recovery diodes and breakdown voltages up to 650V. The combination of technical parameters - low gate charge, input capacitance and resistance, fast recovery phase of the intrinsic diode, very low recovery charge (Qrr) and recovery time (Trr) and optimal soft-switching performance - place the new devices ahead of competitive offerings, ST believes. The FETs are available in multiple package/breakdown-voltage combinations, with pricing from $1.55 (1000),

 

ST; www.st.com/mdmeshdm2