Reduced losses from 100V shielded-gate trench MOSFET

March 23, 2016 // By Graham Prophet
This 100V MOSFET joins Fairchild’s PowerTrench MOSFET range; the flagship device of the company’s latest generation of 100V N-channel power MOSFETs, the FDMS86181 100V Shielded Gate PowerTrench MOSFET promises substantial improvements in efficiency, reduced voltage ringing and lower EMI.

The primary advantages of the new FDMS86181 are its 40% reduction in Rdson which lowers conduction losses and its minimised gate charge (Qg) which reduces switching losses. The exceptionally low Qrr of the FDMS86181 virtually eliminates the voltage overshoots that cause ringing, which allows for the reduction or elimination of snubbers in product designs and reduces EMI. This advantage of the FDMS86181 allows designers to both reduce product size and bill-of-materials (BOM) costs. for power supplies, motor drives and other applications requiring a 100V MOSFET.

“Our new 100V N-channel FET is a major advance over our previous, industry-leading generation of PowerTrench MOSFETs, and performs dramatically better than its competitors in virtually every performance category, from efficiency through reliability,” said Suman Narayan, Vice President and General Manager of Fairchild’s iFET business unit.