RF power amplifier modules feature innovative packaging that simplifies assembly

October 29, 2012 // By Jean-Pierre Joosting
TriQuint Semiconductor has released four packaged GaAs pHEMT RF power amplifier modules that deliver high output power, gain and efficiency with coverage from 6 to 38 GHz. Each amplifier is packaged for easier assembly including designs that support multi-layer PCB layouts.

The amplifiers are excellent choices for use in commercial applications such as point-to-point microwave radios, very small aperture terminals (VSATs) and defense systems such as communications, radar and electronic warfare (EW).

The four amplifiers include: the TGA2502-GSG, which provides 3.6-W, CW from 13 to 16 GHz for VSAT systems; the TGA2575-TS, which offers 3-W CW from 32 to 38 GHz for communications and defense radar systems; the TGA2704-SM, which covers 7-W CW from 9 to 11 GHz for microwave radio and radar; and the TGA2710-SM, which delivers 7-W CW from 9.5 to 12 GHz also for microwave radio and radar.

The TGA2575-TS is the latest addition to TriQuint’s Die-on-Tab product family, which makes it easier for manufacturers to handle die-level devices and assemble components by placing semiconductor FETs or MMIC amplifiers on thermal spreaders. A vacuum reflow process creates bonds between dies and bases. These bonds are virtually void-free and have high thermal stability. The TGA2575-TS and all die-on-tab products are inspected in the factory for thorough quality assurance and higher effective yields.

The TGA2502-GSG 13 to 16 GHz GaAs pHEMT RF power amplifier is specified at 2.8 W; 20 dB large-signal gain; 25 dB small-signal gain; 25% efficiency; 7 V at 1.3 A; 14-lead flange mount package.

The TGA2575-TS 32 to 38 GHz GaAs pHEMT RF power amplifier is specified at 3 W; 19 dB small-signal gain; 22% power-added efficiency; 6 V at 2.1 A. The TGA2575 die is mounted to an 8.92 x 5.31 mm thermal spreader.

The TGA2704-SM 9 to 11 GHz GaAs pHEMT RF power amplifier is specified at 8 W; 19 dB large-signal gain; 22 dB small-signal gain; 40% power-added efficiency; 9 V at 1.05 A; 7 x 7 x 1.27 mm leadless SMT package.

The TGA2710-SM 9.5 to 12 GHz GaAs pHEMT RF power amplifier is specified at 8 W; 19 dB large-signal gain; 20 dB small-signal gain; 36% power-added efficiency; 9 V at