RF power devices tolerate damp environments for field deployment

December 12, 2013 // By Graham Prophet
A range of moisture-resistant devices employs a gel-filled package cavity for increased application robustness and reliability in harsh environments

STMicroelectronics has announced two moisture-resistant RF power transistors that increase the ruggedness and reliability of applications operating in high-moisture environments. The cavity of the two 50V RF DMOS devices is filled with gel, protecting the die from electro-migration such as silver dendrite migration, a well-known phenomenon that appears in standard ceramic packages due to a combination of high temperature, biasing and humidity. The use of gel-filled packages helps reduce the overall maintenance costs of the applications running in high-moisture environments.

ST’s 150W SD2931-12MR and 300W SD4933MR provide a cost-effective solution for 50V industrial RF power generators in applications such as induction heating, CO 2 laser-beam sources, PECVD (Plasma-enhanced chemical vapour deposition) sputtering, and solar-cell manufacturing equipment.

The SD4933MR also features the industry’s highest breakdown voltage, which is greater than 200V combined with a 65:1 load mismatch capability in all phases, meeting the most robust design needs.

The SD2931-12MR and SD4933MR are priced at $53 and $77.60, respectively (1000).

ST; www.st.com/rf