RF power transistors tolerate mismatch and high VSWR

June 05, 2013 // By Paul Buckley
NXP Semiconductors has added the BLF188XR to its XR family of 'eXtremely Rugged' LDMOS RF power transistors.

Designed for difficult engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression. The BLF188XR is capable of providing 1600 W of peak output power and can operate as high as 60V, and still pass extreme ruggedness testing. Other key features include stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation, and several enhancements that make the XR device easy to design in and tune in multiple applications.

The BLF188XR claims excellent linearity, making the device a candidate for high-power linear applications. The BLF188XR is ideal for large-scale industrial, scientific and medical (ISM) applications in frequency ranges under 300 MHz, while the BLF578XR series is recommended for frequency ranges up to 500 MHz. Engineering samples of the BLF188XR are now available.
NXP,  www.nxp.com/pip/BLF188XR