Richardson RFPD offers InGaP HBT amplifiers from Freescale

May 14, 2012 // By Jean-Pierre Joosting
Richardson RFPD has announced the immediate availability and full design support capabilities for a pair of InGaP HBT amplifiers from Freescale Semiconductor. The two linear power amplifiers are the latest additions to Freescale's extensive range of GaAs MMICs optimized for wireless infrastructure applications.

Designed to streamline development for today's demanding 3G and 4G networks, the amplifiers are ideally suited for small cell applications, including femtocell and picocell, as well as macro cell base stations, tower mount amplifiers (TMA), remote radio heads (RRH) and repeaters. Both devices are housed in cost-effective, surface mount QFN plastic packages.

The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier that is suitable for applications with frequencies from 400 to 1000 MHz such as code division multiple access (CDMA), global system for mobile communications (GSM), long term evolution (LTE) and ZigBee® with 3 to 5 V supply. Key features include: P1dB of 29.6 dBm at 900 MHz, power gain of 31.7 dB at 900 MHz, OIP3 of 42 dBm at 900 MHz, and active bias control (adjustable externally). The amplifier performs well with digital predistortion systems and has a single-ended power detector.

The MMZ25332B is a high efficiency InGaP HBT amplifier that is suitable for 2400 MHz ISM applications, WLAN (802.11g), WiBro (802.11b), WiMAX (802.16e), W-CDMA, TD-SCDMA, LTE and wireless broadband mesh networks applications with frequencies from 1800 to 2800 MHz using simple external matching components with 3 to 5 V supply. Key features include: P1dB of 33 dBm at 2500 MHz, power gain of 26.5 dB at 2500 MHz, OIP3 of 46 dBm at 2500 MHz, EVM of <3% of 27 dBm output power (WiFi, LTE waveform), active bias control (adjustable externally), and single--ended power detector.

Both parts are in stock and available for immediate delivery.