The S5 device addresses requirements for system efficiency levels up to and beyond 98% for highest yields of energy from solar cell installations and reduced system costs. It delivers increased levels of robustness and quality to aid end customers in achieving up to 20 years of operational lifetime.
The Discrete IGBT features improved switching behaviour to reduce circuit complexity and ultimately overall system costs by eliminating the need of capacitors and Zener diodes. Robustness and quality levels are further enhanced with a 25% increase in surge current handling capability, which gives increased confidence in the robustness of designs. The newly introduced device has low typical saturation voltage V CE(sat) of 1.60V at 175°C. High efficiency can be maintained even during high temperature operations.
The first wave of 30A, 40A, 50A and 75A current classes are available in the TO-247 3-pin package and are co-packed with the Rapid1 free-wheeling diode.