Samsung has pushed the envelope of DRAM scaling, while using currently available immersion ArF lithography, in its transition to volume production of what it characterises as the industry’s most advanced 20-nm 4-Gb DDR3 DRAM.
The new 20-nm 4-Gb DDR3- based modules can save up to 25% of the energy consumed by equivalent modules fabricated using the previous 25-nm process technology.
With DRAM memory, where each cell consists of a capacitor and a transistor linked to one another, scaling is more difficult than with NAND Flash memory in which a cell only needs a transistor. To continue scaling for more advanced DRAM, Samsung refined its design and manufacturing technologies and came up with a modified double patterning and atomic layer deposition.
Samsung’s modified double patterning technology enables 20-nm DDR3 production using current photolithography equipment and establishing the core technology for the next generation of 10 nm-class DRAM production. Samsung also successfully created ultrathin dielectric layers of cell capacitors with an unprecedented uniformity, which has resulted in higher cell performance.
With the new 20-nm DDR3 DRAM applying these technologies, Samsung also has improved manufacturing productivity, which is over 30% higher than that of the preceding 25-nm DDR3, and more than twice that of 30-nm-class DDR3.