ON Semiconductor and power conversion specialist Transphorm have announced a newly formed partnership to co-develop and co-market gallium nitride (GaN) based products and power system solutions for a variety of high voltage applications in the industrial, computing, telecom and networking sectors.
This strategic partnership develops strengths inherent in both companies. Transphorm positions itself as the first company to bring to market production-qualified 600V GaN-on-silicon transistors: ON Semiconductor, as a supplier of energy efficient power solutions, provides expertise in system design, already having a portfolio that ranges from power discretes, high performance AC/DC controllers and integrated switchers to full custom ASIC power management solutions.
For power applications, GaN has been expected to deliver significant performance advantages compared to silicon based devices. Packaged products are currently being co-developed by ON Semiconductor and Transphorm to boost efficiency and power density.
The first co-developed solutions based on 600V GaN transistors are expected to be available for sampling before the end of 2014. These solutions will address high power density applications in the 200W to 1000W power range for compact power supplies and adapters addressing the telecom and server markets. Under the terms of the partnership, the co-developed packaged transistor products will include low voltage MOSFET silicon from ON Semiconductor for the cascoded switch, and GaN high voltage High-Electron-Mobility Transistors (HEMT) from Transphorm. Co-packaging, assembly and test of the devices will be done at ON Semiconductor production facilities.
Power system reference designs will be provided to customers, enabling implementation of new solutions with GaN-based transistors and the high performance AC/DC controllers required to take full advantage of the technical benefits of GaN devices.
ON Semiconductor; www.onsemi.com