SemiSouth begins sampling 650-V 55-mOhm SiC JFETs

May 17, 2012 // By Paul Buckley
SemiSouth Laboratories, Inc., is delivering what the company claims is the industry's first 650 V silicon carbide JFET power transistors.

The fast switching speeds, large current handling capability combined with the superior thermal properties of SiC makes these devices ideal candidates for power electronic applications. They employ vertical trench JFET structures, which allow for industry-leading on-resistance per unit area, as much as five to ten times lower than competing technologies.

Dr. Jeffrey B. Casady, President/CTO of SemiSouth, commented: “Customers in markets such as EV drive train, UPS, welding, solar, induction heating have long been asking for SiC switches which are very reliable, cost-effective, and capable of high-efficiency at high power densities.”     

Dieter Liesabeths, SemiSouth's Senior Vice President of Sales and Marketing added: “This product is very significant. Markets where we are already in volume production using our 1200 V switch such as solar and UPS, also require lower-voltage switching at 650 V for efficiency and higher power density solutions where grid voltage or bus voltages are lower.  Also, the automotive industry is split on the EV drive train with some customers requiring 1200 V and higher, and others requiring only 650 V.  So we can now serve these markets even better with power transistor solutions from 650 V through 1700 V.”     

The 650V/55mΩ SJDA065R055 SiC JFETs – like many SemiSouth devices – feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no 'tail' current at 150 degrees C. RDS(on) typical for these new voltage-controlled devices is 0.044 Ω, which also exhibit a low gate charge and low intrinsic capacitance.     

Typical applications for these TO-220-packaged devices are solar inverters, SMPS, PFC circuits, induction heating, UPS and motor drives.     

Visit SemiSouth Laboratories at