Silicon carbide Schottky diodes with lowest Vf, highest surge currents

May 16, 2016 // By Graham Prophet
Rohm Semiconductor’s third-generation silicon carbide Schottky Barrier Diodes(SBDs) promise optimum stability and power efficiency for high power applications.

The diodes, packaged in TO-220AC outline, are rated at 650V/6, 8, 10A; they realize the lowest fF forward voltage, of 1.35V at 25C and 1.44V at 150C, for a forward current of 10A: and lowest IR (reverse leakage current) of 0.03μA at 650V (25C). Rohm says that previously, it has been difficult to combine low forward voltage with high surge current ratings; but in these devices the Ifsm rating is extended to 82A (50Hz, single pulse).


SiC diodes exhibit stabler temperature characteristics and ultra-short reverse recovery time compared with silicon-based devices which basically makes them ideal for high speed switching. Indicating extremely stable low forward voltage at high temperatures, the SiC SBDs also guarantee minimum reverse current. Maximum operating temperature is 175°


Compared to the single SBD structure of Rohm’s 2nd generation, this 3rd generation contains a PN junction structure along with Schottky Barrier, which additionally ensures durability in bipolar operation. The PN junction, in effect, turns on under surge conditions tosupport the higher current flow without damage. Rohm concludes that these features contribute to the ongoing trend of high efficiency, high power density and highly robust designs.


Lower current rating devices and D2pak (LPTL) package will be available in June 2016; Rohm also disclosed that it has higher-rated SiC Diodes optimised for automotive applications, in TO-247 packaging (to 40A, and in D2pak to 20A.


Rohm Semiconductor;