Small-footprint, high-voltage drive transistor arrays

September 20, 2016 // By Graham Prophet
Toshiba Electronics Europe has a series of next-generation output transistor arrays that feature a DMOS FET type sink output. The TBD62183AFNG and TBD62183AFWG are suitable for level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals.

The 8-channel sink-output arrays rated for 50V and are packaged in SSOP18 and SOL18 outlines; input rating is 30V and output rating 50V. TBD62083A-series has an IOUT of 500 mA/ch while the TBD2183A-series is designed for low power applications with a maximum IOUT of 50 mA/ch. With a DMOS FET type output, the two arrays eliminate the need for a base current for the input pin. The devices achieve operation with a low maximum input current of 0.1 mA @VIN=3V, while delivering very low power consumption. They also have output characteristics similar to the Vce (sat) properties of a Darlington Bipolar transistor, making them suitable for replacing in-line bipolar transistors in Toshiba’s TD62083A series.

 

The TBD62183AFNG is housed in an SSOP18 package and the TBD62183AFWG is in a SOL18 package. Target applications include white goods like fridges and coffee machines, battery charger, video surveillance systems, LED displays and industrial equipment such as welding machines.

 

Toshiba; www.toshiba.semicon-storage.com