These R8 logic level power MOSFETs use trench technology to offer low on-state resistance (R DS(on)) of 12 milliohms (typical) and total gate charge (Q G) of 18 nC (typical), increasing efficiency performance by up to 6% compared to existing solutions. The IRHLNM87Y20SCS device has a BVDSS rating of 20V and a maximum drain current (ID) rating of 17A. The devices are available in IR’s SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.
The products are fully characterised for radiation performance to 300 krads of TID and SEE with LET of 81 MeV-cm²/mg with V GS rating of 12V. Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be suited for applications requiring a mission life of 15 years or more.
IR; www.irf.com/product-info/datasheets/data/irhlnm87y20.pdf and