Smaller packaging for 60V power MOSFET

March 19, 2014 // By Graham Prophet
Diodes Inc. has claims to have the smallest 60V N-channel power MOSFET with a sub-100-mΩ on-resistance. With a footprint measuring 1.6 x 1.6 mm and a typical height of 0.5 mm, the DFN1616-packaged DMN6070SFCL helps achieve higher power densities in space-critical products.

With its on-resistance of only 74 mΩ typical at a V GS of 4V, the MOSFET also helps to minimise conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2A and supports a pulsed current of 10A, enabling it to cope with DC-DC conversion spikes.

The miniature MOSFET is one of a series of 60V N- and P-channel devices announced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.

The DFN1616-packaged DMN6070SFCL 60V N-channel MOSFET is priced at $0.15 (10,000).

Diodes; www.diodes.com