Soitec increased production of bonded SOS wafers to meet Peregrine Semiconductor demand

November 07, 2012 // By Jean-Pierre Joosting
Soitec has announced it has more than doubled production of bonded silicon-on-sapphire (BSOS) substrates to meet increased demand from its strategic partner, Peregrine Semiconductor Corporation.

Peregrine Semiconductor, a fabless provider of high-performance radio frequency integrated circuits (RFICs), has increased peak-production capability of its latest-generation STeP5 UltraCMOS technology-based RF switches to more than two million units a day, to support design wins in the Radio Frequency Front Ends (RFFEs) of today’s most advanced 4G smart phones, and other wireless-communication applications.

Soitec’s direct wafer-bonding technologies are used to produce the BSOS substrate employed in the manufacture of Peregrine Semiconductor’s highly-tuned semiconductor wafers. The combination of Soitec’s innovative substrate, and Peregrine Semiconductor’s UltraCMOS process technology, and IC design expertise, enable high-performance RFICs for a variety of applications.

“We are experiencing powerful traction in the market with the latest STeP5 UltraCMOS RF switches, and we believe these products enable the high level of RF performance that is critical for new, 4G LTE smartphones and wireless devices,” said Mark Miscione, vice president of RF Technology Solutions for Peregrine Semiconductor. “Soitec’s expertise has been important in the development of a substrate technology that offers the reliability, yield, and process scalability of equivalent bulk CMOS technologies. We are pleased with the continued commitment and support we receive.”

www.psemi.com
www.soitec.com