Exodus products feature LDMOS, GaN, GaAsFET discrete and Chip & Wire Hybrid technologies with amplifier designs covering octave through decade frequency ranges from 0.01 MHz to 40.0 GHz – with power levels exceeding 1 kW for Modules and 10 kW for ‘rack mount’ amplifiers.
Most recently available are three SSPAs products.
The AMP1025 model covers 20 to 1000 MHz and is a compact 70W Broadband module using Class AB linear LDMOS Devices with 5 µse on/off switching speed. It has a large signal gain of 48.5 dB min. and a Psat output power of 70 Watts min (80 Watts typ.). The 2-Tone Intermodulation (IMD) is >30 dBc typ.
The AMP1021X2 is a very compact (60 x 50 x 11 mm) GaN based amplifier covering the frequency range 225 to 2600 MHz. With a Psat output power of 7W min, 10W typical, plus a gain of 39 dB, the current draw is 1.4A typical. Total weight is 57g.
AMP2035 is a 6 to 18 GHz, 10W Ultra Broadband System featuring Class AB linear GaAs FET design in a small and lightweight benchtop chassis. Power Output is 10 Watts min. with a large signal gain of 43 dB min. and 2-tone Intermodulation (IMD) of >30 dBc typ.
Aspen Electronics; www.aspen-electronics.com