Describing the product line as the biggest step forward in this sector for some time, an IR spokesman cited the mechanical and thermal re-design and incorporation of IR’s advanced Trench IGBTs; the SiPs also include a three-phase gate driver IC.
The IRAM SiP1A Gen2 modules also feature upgraded thermo-mechanical technology to improve thermal performance and system efficiency by delivering increased power density and enhanced system ruggedness and reliability. The package is no longer over-moulded with an exposed thermal pad on one face, with all internal power devices on heat spreaders. The new devices are pin-to-pin compatible with the existing IRAM SiP1A series.
The package design yields a 50% reduction in themal “spike” effects and compared to similarly dimensioned devices of the first generation, handle 30% more current, at up to 20A, equipping them for light industrial applications as well as appliances.