Compared to first-generation devices, the new diodes have lower reverse-recovery charge (Q RR) to minimise switching losses, extending their efficiency advantage over standard ultrafast diodes. The lower Q RR also speeds up the fine-tuning of circuit designs, enabling faster time to market. Performance approaches that of silicon-carbide diodes, which are typically at least 30% more expensive, ST asserts.
The second-generation devices joining ST’s 600V tandem diode range are the STTH8T06DI and STTH8ST06DI rated for 8A average forward current, and the STTH12T06DI is for applications up to 12A. The devices have peak forward surge-current ratings equivalent to those of ultrafast diodes, ensuring robustness and reliability, and a wide operating junction-temperature range of -40°C to 175°C. In the TO-220AC isolated-tab package they cost from $1.57 for the STTH8T06DI (1000).