The BiCS is based on a 48-layer stacking process, which Toshiba says enhances the reliability of write/erase endurance and boosts write speed, and is suited for use in diverse applications, primarily solid state drives (SSD). The structure stacks flash memory cells iin a vertical direction, from a silicon plane, which allows significant density improvement over conventional NAND flash memory, where cells are arrayed in a planar direction on a silicon plane.
Since making the world’s first announcement of technology for 3D Flash memory as long ago as 2007, Toshiba has continued development towards optimising mass production. To meet further market growth in 2016 and beyond, Toshiba confirms it is promoting the migration to 3D flash memory by rolling out a product portfolio that emphasizes large capacity applications, such as SSD.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com