This introduction builds on the previously announced partnership between Transphorm, Transphorm Japan and ON Semiconductor to bring GaN-based power solutions to market. With typical on-resistances of 150 and 290 mOhms, the two new GaN products, TPH3202PS (ON Semi equivalent: NTP8G202N) and TPH3206PS (ON Semi equivalent: NTP8G206N), come in an optimised TO-220 package for integration into existing circuit board manufacturing capabilities.
In 2014, Transphorm showed evaluation boards using 600V TO-220 HEMTs; now come GaN-specific reference designs with ON Semiconductor. Primit Parikh, President and Co-Founder of Transphorm says, “We have consistently demonstrated, since 2011, that our JEDEC-qualified 600V GaN products enable more efficient, compact and low-cost solutions than traditional silicon devices. With our partner, ON Semiconductor, we are providing complete reference design platforms and tools that enable designers to take advantage of GaN’s benefits.”
The two-stage evaluation board NCP1397GANGEVB (Transphorm equivalent: TDPS250E2D2) is offered as a complete reference design so that customers can implement GaN cascode transistors in their power designs. The evaluation board is representative of a production power supply that has been re-designed for smaller size and higher performance systems, and it highlights the capability and potential of GaN transistors in this power range. The boost stage delivers 98% efficiency and uses the NCP1654 power factor correction controller. The LLC DC-DC stage uses the NCP1397 resonant mode controller to offer a 97% full load efficiency. This performance is achieved while running at 200+ kHz and is also able to meet EN55022 Class B EMC performance. Full documentation is available at the Transphorm and ON Semiconductor websites.
The Transphorm GaN HEMT devices are in mass production at the Fujitsu Semiconductor group’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan. Transphorm
ON Semiconductor; www.onsemi.com