Transphorm’s GaN power devices move to full production at Fujitsu

January 27, 2015 // By Graham Prophet
Transphorm and Fujitsu Semiconductor have announced that Fujitsu’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of gallium nitride (GaN) power devices for switching applications.

The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm, will support expansion of Transphorm’s GaN power device business. Transphorm claims to have the “first and only” qualified 600V GaN device platform, backed by its GaN power IP portfolio. The first photovoltaic power conditioner products using the GaN module from Transphorm was launched in January, 2015. Other applications include ultra-small AC adapters, high-density power supplies for PCs, servers and telecom equipment, and highly efficient motion control systems.

In 2013, Fujitsu Semiconductor and Transphorm announced the business integration of their GaN power device solutions. Since then, Transphorm’s JEDEC-qualified process has been combined with Fujitsu Semiconductor’s basic technology and ported to the CMOS-compatible, 150mm fab of Aizu Fujitsu Semiconductor Wafer Solution Limited, with key improvements for high-volume, silicon-compatible device manufacturing.

“Manufacturing Transphorm’s GaN power devices at the Fujitsu Aizu-Wakamatsu facility will assure our customers a scalable, stable supply of products with the stamp of Fujitsu’s proven, high-quality standard in mass manufacturing,” said Fumihide Esaka, CEO of Transphorm. “We will continue to expand our GaN power device portfolio with continued partnership with Fujitsu Semiconductor.”

Transphorm; www.transphormusa.com

Fujitsu Semiconductor; http://jp.fujitsu.com/fsl/en/