The TVS devices offer best-in-class protection against electrostatic discharge (ESD) for electronic systems. With very-low dynamic resistance (Rdyn = 0.19Ω) and ultra-low capacitance (C = 0.4 pF) the ESD102 TVS Diode (single line and multiline array) enable engineers to achieve strict requirements for ESD robustness and signal quality of the high-speed interfaces.
ICs built in ever-smaller process geometries causes an increased sensitivity of the IC regarding ESD events. Dedicated ESD protection devices are necessary to handle the ESD event before the destructive energy enters the IC input/output (I/O). Infineon offers a broad portfolio of TVS diodes and arrays specifically designed to minimise risk of short circuits across the full range of computing and communications system applications.
The ESD102 series addresses TVS for the high-speed data interfaces – such as USB 3.0, GBit Ethernet, Firewire and HDMI links - used in desktop laptops, computers, consumer electronics and also in more and more smartphones. These data lines require robust protection with the smallest possible package size and lowest device capacitance. The new series provides protection that exceeds specifications of IEC61000-4-2, in either a 2-pin (for single line), 4-pin (for 2-line array) or 5-pin (for 4-line array) package. Leakage current is ≤ 50nA, contributing to longer system battery life. A dedicated pad layout keeps PCB layout simple and minimises parasitic effects.
ESD102-U1-02ELS (Uni-directional TVS diode, 1-line, TSSLP-2-3 package), ESD102-U2-099L (Uni-directional TVS diode, 2-line, TSLP-4-10 package) and ESD102-U4-05L (Uni-directional TVS diode, 4-line, TSLP-5-2 package) have performance parameters including;:
ESD / transient protection of high speed data lines exceeding:
IEC61000-4-2 (ESD): ≥ ±20 kV (air / contact)
IEC61000-4-4 (EFT): ≥2.5 kV / ≥50A (5/50 nsec)
IEC61000-4-5 (surge): 3A (8/20 μsec)
Maximum Working Voltage: V RWM = 3.3V
Line Capacitance (I/O to GND): C L = 0.4 pF (typical)
Clamping Voltage: V CL = 8V at I PP = 16A (typical)
Dynamic Resistance: R DYN = 0.19Ω (typical)
Reverse Current: I R = 1 nA at