Ranging from 15A to 90A, the IRGP47xx family of IGBTs uses trench thin-wafer technology to reduce conduction and switching losses to deliver increased system efficiency. Available as discrete devices or co-packaged with a soft recovery low Qrr diode, these IGBTs are optimised for ultra-fast switching (8 kHz-30 kHz), offering an increased short circuit rating of 6µs, and positive VCE(ON) temperature coefficient for easy paralleling. The higher breakdown voltage provides extra reliability during extreme weather variations and AC-line instability, and eliminates the requirement for voltage suppression devices.
They feature low VCE(ON) of 1.7V (typical) at 100°C and low total switching energy (ETS) to reduce power dissipation. Offered as packaged devices, other key features include maximum junction temperature of 175°C and low EMI for improved reliability.