Ultra-low on-resistance/output charge, 60V SMD MOSFET

October 05, 2016 // By Graham Prophet
Toshiba presents its 60V SOP Advance SMD device as allowing designers to optimise performance and reduce size of power supply and motor control designs; joining the U-MOS IX-H family of compact, high-efficiency, high-speed switching MOSFETs this device is rated at a maximum VDSS of 60V and a maximum drain current of 100A.

The TPH1R306PL is supplied in a SOP Advance surface mount package and has an ultra-low typical on resistance (R DS(ON)) of 1.0 mOhm (@ V GS = 10V). Toshiba's claims for its U-MOS IX-H process include optimum trade-off between R DS(ON) and output capacitance/output charge, typical Q OSS is 77.5 nC. The TPH1R306PL MOSFET is suited to use in DC-DC converters and the secondary side of AC-DC power supplies.


Due to a high pulse current capability (Idp) up to 500A and an increased maximum channel temperature of 175C, the MOSFET will also suit motor applications in cordless home appliances and power tools. For applications that require further improved heat dissipation, a double sided cooled version - TPW1R306PL - is available.


Toshiba Electronics; www.toshiba.semicon-storage.com