Ultra-small FemtoFET MOSFETs feature lowest on-resistance

November 06, 2013 // By Graham Prophet
Texas Instruments has introduced what it says are the smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets. FemtoFET MOSFET transistors features ultra-small packaging and on-resistance below 100 mΩ.

The three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40% when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 feature on-resistance below 100 m Ω , which is 70% lower than similar devices. All the FemtoFET MOSFETS provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM).

Part Number

Channel

BVdss

(V)

Vgs

(V)

Typical Rdson (mohm)

Id @

Ta = 25°C

(A)

1.8V

2.5V

4.5V

CSD17381F4

N

30

12

160

110

90

3.1

CSD17483F4

N

30

12

370

240

200

1.5

CSD13381F4

N

12

8

310

170

140

2.1

CSD25481F4

P

-20

-12

395

145

90

-2.5

CSD25483F4

P

-20

-12

580

338

210

-1.6

CSD23381F4

P

-12

-8

480

250

150

-2.3

Measuring 0.6 x 1.0 x 0.35 mm, the FemtoFETs carry continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today. They cost from $0.06 (1000) for the CSD17483F4, to $0.10 for the CSD17381F4.

TI; www.ti.com