Ultra-small P-channel Enhancement-Mode Power MOSFETs

September 19, 2013 // By Graham Prophet
Advanced Power Electronics, Taiwanese manufacturer of MOS power semiconductors and ICs for DC-DC power conversion applications, has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, for use as load switches.

Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum Drain-Source Breakdown Voltage (BV DSS) of -20V, maximum R DS(ON) of 145 m Ω, and a maximum Continuous Drain Current (I D) at 25degC of -1.8A.

APEC; www.a-powerusa.com/docs/AP2325GEU6-3.pdf