Verilog-A RF device models to help GaN adoption in 4G/LTE infrastructure

June 20, 2012 // By Jean-Pierre Joosting
Cree has released a suite of Verilog-A proprietary non-linear device models for its GaN RF devices, developed for use with leading RF design platforms from Agilent ADS and AWR Microwave Office.

The device models support more complex circuit simulations including modulation envelope analysis for use in the latest innovative broadband and multi-mode RF power amplifiers for 4G cellular telecommunications.

“The release of this new suite of device models enables RF design engineers to predict non-linear performance using harmonic balance, conduct robust transient analysis as well as use “real-world” arbitrary modulation signals with envelope simulation for Cree’s GaN HEMT devices,” said Jim Milligan, director RF and microwave, Cree. “The Verilog-A models, together with envelope simulators, allow designers to directly investigate higher efficiency circuit approaches, such as Doherty amplifiers, to improve adjacent channel power ratios, spectral re-growth and error vector magnitude, while assessing if amplifier performance meets spectral mask requirements for LTE deployments. As these models also take advantage of multi-core processors, simulation times can be greatly reduced.”

“Transient analysis allows insight into switched-mode power amplifier configurations that may also be driven directly from digital signals,” said Ray Pengelly, RF business development manager, Cree. “Combined with such approaches as Chireix out-phasing, unprecedented efficiencies of greater than 70 percent have been demonstrated.”

The models are available free to Cree’s RF customers.