Vishay adds -40-V and -30-V MOSFETs in PowerPAK packages

July 12, 2013 // By Paul Buckley
Vishay Intertechnology has extended its offering of TrenchFET Gen III p-channel power MOSFETs with new -40 V and -30 V devices in the PowerPAK 1212-8 and PowerPAK 1212-8S packages.

Featuring on-resistance at -10 V and -4.5 V gate drives, the Vishay Siliconix SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package.

The SiS443DN and SiSS27DN are optimised for 24 V, 19 V, and 12 V load switches, as well as adapter and battery switches in a wide range of applications, including power management in mobile computing, smartphones, and tablets. The devices' low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.

In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11.7 mΩ (-10 V) and 16 mΩ (-4.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers low values of 5.6 mΩ (-10 V) and 9 mΩ (-4.5 V) in the PowerPAK 1212-8S package with a low 0.75 mm profile.

The SiS443DN and SiSS27DN are 100 % Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Vishay, (SiSS27DN), (SiS443DN)