Featuring on-resistance at -10 V and -4.5 V gate drives, the Vishay Siliconix SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package.
The SiS443DN and SiSS27DN are optimised for 24 V, 19 V, and 12 V load switches, as well as adapter and battery switches in a wide range of applications, including power management in mobile computing, smartphones, and tablets. The devices' low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times.
In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11.7 mΩ (-10 V) and 16 mΩ (-4.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers low values of 5.6 mΩ (-10 V) and 9 mΩ (-4.5 V) in the PowerPAK 1212-8S package with a low 0.75 mm profile.
The SiS443DN and SiSS27DN are 100 % Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
Vishay, www.vishay.com/doc?62847 (SiSS27DN), www.vishay.com/doc?63253 (SiS443DN)