Wideband GaN power transistor for CW, pulsed & linear operation to 100W

May 21, 2015 // By EDN
At a time of many announcements of gallium nitride devices for power switching, Macom (M/A-COM Technology Solutions) has introduced an RF/microwave GaN device, the NPT2022, a wideband transistor optimised for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.

The NPT2022 supports CW, pulsed and linear operation, with output levels up to 100W or 50 dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900 MHz when operated at 50V. This HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2022 is suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Macom adds, “The NPT2022 features advanced RF performance in a plastic package powered by MACOM’s unique GaN on silicon technology.”

Parameter

Units

NPT2022

Frequency

GHz

DC-2

Small Signal Gain

dB

21

Saturated Output Power

dBm

50.5

Power Gain

dB

20

Drain Efficiency

%

60

MACOM: www.macom.com