X-Fab steps silicon carbide device fabrication up to 150mm wafers

March 11, 2016 // By Graham Prophet
X-Fab Silicon Foundries (Erfurt, Germany) is making wide band-gap, silicon carbide (SiC) technology available from its fab in Lubbock, Texas. The “SiC-ready” facilities include a high-temperature anneal furnace, backgrind equipment for thinning SiC wafers, backside metal sputter and backside laser anneal tools. A high-temperature implanter is scheduled for installation later this year.

This amounts to the means to produce large volumes of SiC devices on 6-inch (150mm) wafers, the company says, adding that it anticipates higher yields and accelerated ramp-up to full scale production. As well as supplying fabless semiconductor vendors, the company will also be positioned to serve as a second source solution for IDMs with their own SiC manufacturing.

“Current SiC offerings are either IDMs creating their own products or relatively small foundry operations using 4-inch (100mm) production facilities,” states Andy Wilson, X-FAB’s Director of Strategic Business Development. “X-FAB is bringing something different to the market, with a SiC capacity of 5k wafers/month ready to utilise and potential to raise this further. We can thus offer a scalable, high quality, secure platform that will enable customers to cost-effectively obtain discrete devices on SiC substrates and also safely apply vital differentiation.”

 

X-Fab; www.xfab.com