The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response-internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.
Qualified for automotive applications
AEC-Q100 qualified with the following results:
Exceeds HBM ESD classification level 2
Device CDM ESD classification level C4B
Maximum reverse voltage of 45V
No positive voltage limitation to anode terminal
Charge pump gate driver for external N-channel MOSFET
Lower power dissipation than Schottky diode/PFET solutions
Low reverse leakage current
Fast 2 µsec response to reverse polarity
–40°C to 125°C operating ambient temperature
Can be used in OR-ing applications
Meets CISPR25 EMI specification
Meets automotive ISO7637 transient requirements with a suitable TVS diode
For automotive alternator and industrial power alternating current (AC) rectification, TI also has the LM74670-Q1 smart diode controller, which has higher gate drive current (70 µA) than the LM74610-Q1, allowing it to handle AC signals up to 300 Hz.
The device is accompanied by the LM74610-DQEVM evaluation module that demonstrates reverse polarity protection as a replacement of Schottky diodes and P-channel MOSFETs in a diode OR-ing configuration. In this reverse polarity protection solution two LM74610 Smart Diode Controllers are used to drive two 40V (VDS) external N-channel MOSFETs.