Applications can typically be found in uninterruptible power supplies (UPSs) as well as in inverters for photovoltaic and welding systems. The L5 family is based on Infineon’s TRENCHSTOP 5 thin wafer technology, with the intrinsically low conduction losses having been reduced further with additional optimisation of the carrier profile.
With a typical V CE(sat) value at 25°C of 1.05V, new levels of efficiency can be reached – up to 0.1% efficiency improvement in a NPC 1 topology or up to 0.3% efficiency improvement in a NPC 2 topology when replacing predecessor TRENCHSTOP IGBTs with the L5 family. Coupled with the positive temperature coefficient of V CE(sat), high efficiency is maintained plus paralleling is straightforward – claimed as benchmark for IGBTs switching below 20 kHz frequency. The TRENCHSTOP 5 technology base used for the new L5 family not only delivers unmatched low conduction losses, but total switching losses are as low as 1.6 mJ at 25°C. Benefits include higher efficiency, improved reliability and smaller dimensions of systems in low switching frequency applications.
The new L5 IGBT family is released in a first wave using the industry standard TO-247 3-pin package. Additionally, for applications requiring extended efficiency enhancement, Infineon also offers the L5 in the TO-247 4-pin Kelvin-Emitter package. When compared to the standard TO-247 3pin package, the TO-247 4pin package provides a further 20% reduction in switching losses. Infineon says the L5 in combination with the TO-247 4-pin package provides the ultimate lowest conduction and switching losses.
The new low V CE(sat) L5 family is available in 30A and 75A current classes as single IGBT and co-packed with Infineon’s ultrafast Rapid 1 and Rapid 2 silicon diodes. The TO-247 4-pin Kelvin-Emitter package will be available in 75A current class.