•  
• EDN Europe MAGAZINE
•  
• Free SUBSCRIPTION
• Subscription Renewal
• View Media Kit

• EDN
• EDN Australia
• EDN Asia
• EDN China
• EDN Japan

Nonlinear RF model library with high electron mobility transistors

Agilent Technologies has announced the availability of Mitsubishi Electric’s nonlinear GaAs and GaN RF model library for use with the company’s ADS (advanced design system). The upgraded library supports the ADS2009 Update 1 and the ADS2011 version. The model library includes high-power GaN HEMT (high electron mobility transistor) and low-noise HEMT devices commonly used in base station and direct-broadcast satellite receivers as well as other radio communications equipment.
The library includes an ADS symbol for schematic capture, a simulation model that includes parasitic effects. It also covers many body sizes and part values that enable sweeps and optimisations, claims the company. The X-parameter models of circuit-level designs can be generated directly from ADS, says the company.