• Ferroelectric RAMs operate at a voltage between 3 and 3.6V 8/7/2011

  Fujitsu Semiconductor Europe is sampling the SPI (serial peripheral interface) FRAMs (ferroelectric RAMs) based on the 0.18µm technology for its customers. With this step, the company approaches the end of the migration process from 0.35 to 0.18µm technology ....

  Flash storage module offers 1Tbyte of NAND flash memory 29/6/2011

  The 3U VPX FSM (flash storage module) from Curtiss-Wright Controls Electronic Systems is designed for use in space, weight and power constrained military applications. The VPX3-1TB module delivers 1Tbyte of single-level cell NAND flash memory and can ....

  EEPROM chip suits write-intensive applications 20/6/2011

  STMicroelectronics has launched a 2Mbit serial EEPROM chip that is suitable for write-intensive applications. The company claims that the M95M02 IC allows designers to replace multiple EEPROMs with a single device and improve parameter management on ....

  Memory chip transmits data at 400Mbit/s 21/5/2011

  Samsung Electronics has manufactured a high-performance toggle DDR 2.0 MLC (multi-level-cell) memory chip that features a 64Gbit density. The density is made possible by using a 20nm class process technology. The memory chip is designed to support the ....

  Optical interconnect is coming to FPGAs 29/3/2011

  Calling the disclosure a technology announcement – in other words, no specific product introductions or release dates have been revealed – Altera has described work-in-progress to add optical interconnect ....

  Breakout boards for PLD design with Lattice ICs 28/3/2011

  Lattice Semiconductor has announced three low-cost I/O Breakout Boards: the MachXO 2280, ispMACH 4256ZE, and Power Manager II POWR1014A. The boards provide access by hand to densely ....

  Enhanced memory signaling meets performance requirements of graphics and gaming systems 10/2/2011

  Rambus claims that it has enhanced differential signaling for SoC-to-memory interfaces to a 20Gbit/s and developed innovations, which can extend single-ended memory signaling to a 12.8Gbit/s. The company also ....

  High-density QDR and DDR SRAMs enable green networking applications 14/1/2011

  Cypress Semiconductor has announced QDR (Quad Data Rate) and DDR (Double Data Rate) SRAMs at 36Mbit and 18Mbit densities, which are additions to its 65nm SRAM family. They complete a portfolio of 65nm synchronous ....

  Micron’s architecture change to extend the life of NAND 14/12/2010

  Micron Technology recently introduced a high-density NAND flash memory range under the name ClearNAND, and the company has now added clarification on how it intends the product to fit into the market. ....

  High-system-integration PLDs for medium-density designs 1/12/2010

  Lattice Semiconductor’s MachXO2 PLD family offers designers who might previously have used low-density PLDs or CPLDs, ....

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