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RF power transistor delivers high performance

RF Micro Devices has production released the RF3932, a 75W, GaN (gallium nitride) RF UPT (unmatched power transistor) that delivers high performance. The release of the RF3932 follows the recent release of the 140W RF3934, which is the highest output power device in the company’s UPT family. The UPTs support "green" architectures that reduce energy consumption, improve thermal management and optimise network efficiency for network operators. The new UPT operates over a frequency range from DC to 3GHz and delivers high peak efficiency of more than 65%. The UPT also incorporates simple, optimised matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier. The UPT is packaged in a hermetic, flanged ceramic two-leaded package that leverages the company’s heat sink and power dissipation technologies to deliver enhanced thermal stability and conductivity. The RF3932 and the RF3934 are optimal for both driver and/or output stages, depending on overall power requirements. The company’s 48V, high power-density GaN semiconductor process features high RF power density and efficiency, low capacitance, and high thermal conductivity. These features enable the development of compact and efficient high power amplifiers for a range of applications, including private mobile radio, 3G/4G wireless infrastructure, ISM, military and civilian radar and CATV transmission networks.