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Trench FETs push on-resistance spec still lower
30-V devices maximise on-resistance * gate charge figure-of-merit
EDN Europe, 26 Mar 2008The first in what Vishay Siliconix is calling its TrenchFET Gen III family, the Si7192DP, is an n-channel device in a PowerPAK SO-8 package, that offers a maximum on-resistance of 2.25 mΩ at a 4.5-V gate drive voltage. The product of on-resistance and gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98. this, the company claims, is the best figure yet achieved for a FET with VDS=30V and VGS=20V, in an SO-8 footprint. Vishay Siliconix intend the Si7192DP be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
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